Product Recommendation | Application of MOS tubes in PD fast charging products

2025-06-23

Definition and Application of PD Fast Charging:

PD fast charging, also known as USB-PD, is a fast charging standard formulated by the USB-IF organization and is one of the mainstream fast charging protocols currently available. The USB-PD fast charging protocol uses a Type-C interface for output, but having a Type-C interface does not necessarily mean it supports USB-PD protocol fast charging. PD fast charging is widely used in mobile phones, tablet computers, multi-port chargers, mobile power supplies, car chargers, smart power strips, and portable energy storage devices.

 

 

 

Typical LLC resonant topology circuit for PD fast charging:

 

 

Recommended PD fast charging solution products:

PWM For primary high-voltage MOS, PFC+LLC circuits, it is recommended to use Born Semiconductor's superjunction MOS series products. These utilize multi-layer epitaxial technology comparable to Infineon. C3, P6, and P7 series products offer superior EMI characteristics, ultra-low on-resistance and junction capacitance, effectively reducing conduction losses and switching losses, resulting in high efficiency, low heat generation, and adaptability to higher switching frequencies.

 

Part No.

VDSS(V)

ID(A)

VGS(th)

Typ V

RDS(ON) VGS=10V

Type

Package

Typ(mΩ)

Max(mΩ)

BMF65R600

650

8

3

520

600

N

TO-220F

BMF65R380

650

10.6

3

340

380

N

TO-220F

BMF65R280

650

13.8

3

240

280

N

TO-220F

BMF65R190

650

20

3

160

190

N

TO-220F

BMI65R600

650

8

3

520

600

N

TO-252-2

BMI65R380

650

10.6

3

340

380

N

TO-252-2

BMI65R280

650

13.8

3

240

280

N

TO-252-2

 

PFC Circuit For boost diodes, it is recommended to use Born Semiconductor's silicon carbide Schottky diode series products. These have very low reverse leakage current and reverse recovery time, essentially no reverse recovery current, reducing switching losses, increasing the system's switching frequency, and improving overall system efficiency.

 

Part No.

Electrical Characteristics

Package

VRRM V

IF A

IFSM A

VF V Typ

IR uA Typ

BSDI04A065

650

4

35

1.45

0.1

TO-252

BSDI06A065

650

6

50

1.42

2

TO-252

BSDO04A065

650

4

28

1.42

1

DFN5*6

BSDO06A065

650

6

30

1.4

2

DFN5*6

 

SR Controller This is a secondary synchronous rectifier circuit. It is recommended to use Born Semiconductor's low-voltage SGT-MOS series products. These are designed with SGT technology, achieving the effect of shielding the gate and drift region, reducing Miller capacitance and gate charge, increasing device switching speed, lowering switching losses, and improving system efficiency.  

 

Part No.

VDSS(V)

ID(A)

VGS(th)

Typ V)

RDS(ON) VGS=10V

Type

Package

Typ(m Ω )

Max(m Ω )

BMO10N900

100

71

3

7.4

9.0

N

PFDN5*6

BMO10N630

100

98

3

5.2

6.3

N

PFDN5*6

BMO10N380

100

113

3

3.5

4.3

N

PFDN5*6

BMO10N350

100

138

3

2.9

3.5

N

PFDN5*6

BMO15N930

150

85

3.4

8.2

9.3

N

PFDN5*6

 

USB-PD Controller This is a secondary USB load switch circuit. It is recommended to use Born Semiconductor's low-voltage Trench-MOS series products, which have high input impedance, low drive current, and strong anti-interference capability.  

 

Part No.

VDSS(V)

ID(A)

VGS(th)

Typ V)

RDS(ON) VGS=10V

Type

Package

Typ(m Ω )

Max(m Ω )

BMQ03N850

30

30

1.5

6.2

7.8

N

PFDN3.3*3.3

BMQ03N530

30

63

1.5

3.9

5.3

N

PFDN3.3*3.3

BMQ03N330

30

90

1.6

2.3

3.3

N

PFDN3.3*3.3

BMQ04N500

40

62

1.7

4.0

5.0

N

PFDN3.3*3.3

 

Born Semiconductor (Shenzhen) Co., Ltd. integrates R&D, production, and sales. Main products include: protection devices, diodes, transistors, MOS tubes, motor driver ICs, and interface chips. Possesses a wealth of MOSFET products with excellent performance and price advantages. Product series are widely applicable, suitable for low to high power applications. For more model information, please contact us online. Free samples, quotations, and technical support services are available.