Hardware aspect
BORN has established R&D centers in Wuxi and Xi'an, boasting a research team composed of doctors and senior-level engineers. The facilities are fully equipped, enabling the company to swiftly embark on the design of various products.
Software aspects
• Mastered a low-coupling signal low residual voltage TVS diode and its manufacturing method.
• Developed a low-leakage TVS diode structure and its manufacturing technology.
• Innovatively applied ramp compensation technology to current-mode DC-DC converters.
• Designed a soft-start circuit technology for DC-DC converters.
• Successfully developed an instrumentation amplifier based on a current-reuse DDA structure.
• Created a low-noise amplifier with single-ended input and differential output based on adjustable active inductance.
• Developed a low-capacitance structure low residual voltage ESD surge protection device.
• Mastered ESD protection device technology for high-speed data interfaces.
• Innovatively developed a low residual voltage ESD protection circuit.
• Successfully developed an axial chip diode.
• Optimized the packaging structure of a standard TVS chip diode.
• Developed a special packaging structure for automotive high-power chip TVS diodes.
• Created a chip module integrated chip diode packaging structure.
• Developed a multi-chip stacked chip diode packaging technology.
• Successfully implemented PCB board design with chip diode packaging structure.
• Innovatively developed CELL packaging technology with vertically stacked injection molding structure.
BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD
7/F and 13/F, Senheinokochuang Building, Gaoke Industrial Zone, Dezheng Road, Shiyan Street, Bao 'an District, Shenzhen
Factory Address: Building 6, Intelligent Hardware Industry Port, Intersection of Zheng Bei Avenue and Tan Huai Avenue, Muluan Street, Wuzhi County, Jiaozuo City, Henan Province
