Development of third-generation semiconductor materials in various countries around the world
The third-generation semiconductor materials, represented by silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond, aluminum nitride (AlN), etc., have wider bandgap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate, and higher radiation resistance. These materials are mainly used in fields such as optoelectronic devices and power electronic devices, and have enormous market potential. Developed countries and regions such as Europe, America, and Japan have included silicon carbide semiconductor technology in their national strategies and invested heavily in supporting its development.
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2024-06
PPTC advantages of overcurrent protection devices
PPTC has a wide range of applications in circuits, with advantages such as easy installation, reusability, and good performance.
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2024-06
What is a voltage regulator diode and how to identify it?
Zener diodes have high resistance before reverse breakdown, and after breakdown, the resistance will decrease to a very small value, stabilizing the voltage within a certain range
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2024-06
Overview of the working principle of diodes
A crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor, with space charge layers formed on both sides of its interface and a self built electric field established.
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2024-06
Knowledge of lightning protection and protective devices
By dividing the potential lightning strikes on various objects within the area into different lightning protection zones.
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2024-06
Qualitatively judge the quality of field-effect transistors and transistors
By using the resistance range of the multimeter, the quality of the transistor and MOS transistor, as well as the polarity of the three pins, can be easily determined.
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2024-06
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