New Driver Circuit Product Release - BN2304
2024-06-11
New Driver Circuit Product Release - BN2304
Product Introduction
BN2304 is a high-voltage half bridge driving circuit used to drive power devices such as MOSFETs/IGBTs, with a driving current of+1/-1.5A. The high side withstand voltage is up to 620V, and the dv/dt anti-interference ability is better than 50V/ns. Both the high and low voltage sides have independent undervoltage protection functions, and the input logic is compatible with TTL/CMOS. The design includes interlocking and dead time to effectively prevent two outputs from opening simultaneously, protect the downstream devices, and comply with the AEC-Q100 standard.
Preparation process
The driving circuit chip adopts the mainstream process technology of power integrated circuits - BCD process technology, which combines the advantages of bipolar devices with high transconductance, strong load driving capability, and high CMOS integration and low power consumption, making them complement each other and play to their respective strengths. More importantly, it integrates DMOS power devices, which can operate in switch mode with lower power consumption and can deliver more power to the load.
Typical application
Application area
Popular Articles
BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD
7/F and 13/F, Senheinokochuang Building, Gaoke Industrial Zone, Dezheng Road, Shiyan Street, Bao 'an District, Shenzhen
Factory Address: Building 6, Intelligent Hardware Industry Port, Intersection of Zheng Bei Avenue and Tan Huai Avenue, Muluan Street, Wuzhi County, Jiaozuo City, Henan Province
