ESD New Product Release - BDFN1C011R
2024-06-11
Bern Semiconductor - Tailored Ultra Low Voltage, Low Capacity ESD for 5G Communication
With the development of society, wireless communication technology is developing rapidly and has become extremely important in people's lives and work. It largely meets people's internet needs and greatly promotes the development of the social economy. In response to social demand, 5G WiFi has also been produced, bringing people a unique network experience.
5G WiFi has many advantages, with particularly outstanding data transmission speed. As a new type of mobile communication network technology, its transmission speed can reach tens of GB per second, and its transmission speed in the 2GHz band can reach up to 1Gbps, which is extremely advantageous. However, the high-frequency transmission of data also brings the problem of shorter wavelengths, especially the RF output port of wireless modules is very sensitive to static electricity. In many product manuals, it can be seen that the RF interface of the antenna needs to avoid direct contact with static electricity. Exceeding a certain level of static electricity will cause irreversible damage to the wireless module. Therefore, it is necessary to provide ESD protection for the RF output port of the wireless module.
Comparison between conventional ESD and ultra-low voltage ESD:
The input voltage of the wireless module power line is generally 3.3V, but the voltage of the signal line is less than 1V. Most of the TVS transistors used for protection have a working voltage much higher than their working voltage. When static electricity occurs, the voltage needs to exceed 3.3V before the TVS transistor can provide protection. During the process of the voltage reaching the breakdown voltage from the working voltage, there is a certain safety hazard for the back-end IC.
main parameter
For this purpose, our company has designed an ESD tube specifically designed for high-speed transmission lines, with a working voltage of 1.2V - BDFN1C011R. This TVS tube not only has ultra-low junction capacitance, but also has very low turn-on voltage and clamp voltage, which reduces the loss and attenuation of high-speed signals as much as possible when not in operation, and effectively protects the IC from static electricity and surges.
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BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD
7/F and 13/F, Senheinokochuang Building, Gaoke Industrial Zone, Dezheng Road, Shiyan Street, Bao 'an District, Shenzhen
Factory Address: Building 6, Intelligent Hardware Industry Port, Intersection of Zheng Bei Avenue and Tan Huai Avenue, Muluan Street, Wuzhi County, Jiaozuo City, Henan Province
