Application of MOSFETs in High-Power Power Supplies
2025-09-08
Definition and Application of High Power Power Supplies
High power power supplies refer to power supplies with power ratings of over 500 watts, capable of providing stable power to machines. They achieve this by controlling the switching transistors through circuits for high-speed conduction and cutoff. They convert DC into high-frequency AC to supply transformers for voltage transformation, thereby generating one or multiple required voltage outputs.
High power power supplies are widely used in: industrial automation control, military equipment, scientific research equipment, LED lighting, industrial control equipment, communication equipment, power equipment, instruments and meters, medical devices, semiconductor cooling and heating, air purifiers, electronic refrigerators, LCD displays, communication devices, audiovisual products, security monitoring, computer cases, digital products, and instrumentation fields.
Typical High Power Power Supply LLC Resonant Topology Circuit
Recommended High Power Current Solutions
Primary High Voltage MOS Section For PFC+LLC circuits, it is recommended to use Born Semiconductor's superjunction MOS series products, which adopt multi-layer epitaxial technology benchmarking Infineon C3, P6, P7 series products, featuring superior EMI characteristics, ultra-low on-resistance and junction capacitance, effectively reducing conduction and switching losses, high efficiency, low heat generation, and suitable for higher switching frequencies.
|
Part No. |
VDSS (V) |
ID (A) |
VGS(th) Typ ( V ) |
RDS(ON) VGS=10V |
Type |
Package |
|
|
Typ (m Ω ) |
Max (m Ω ) |
||||||
|
BMF60 R 190 |
600 |
20 |
3 |
160 |
190 |
N |
TO-220F |
|
BMF60 R 090 |
600 |
37 |
4 |
81 |
90 |
N |
TO-220F |
|
BM G 60 R 070 |
600 |
42 |
4 |
62 |
70 |
N |
TO-247 |
|
BMF65R190 |
650 |
20 |
3 |
160 |
190 |
N |
TO-220F |
|
BM G 65R120 |
650 |
32 |
4 |
100 |
120 |
N |
TO-247 |
|
BM G 65R099 |
650 |
37 |
3.8 |
81 |
99 |
N |
TO-247 |
|
BM G 65R070 |
650 |
42 |
4 |
62 |
70 |
N |
TO-247 |
PFC Section For the boost diode in the PFC section, it is recommended to use Born Semiconductor's silicon carbide Schottky diode series products, which have very low reverse leakage current and reverse recovery time, essentially no reverse recovery current, reducing switching losses, improving system switching frequency and overall system efficiency.
|
Part No. |
Electrical Characteristics |
Package |
||||
|
VRRM ( V ) |
IF ( A ) |
IFSM ( A ) |
VF ( V ) Typ |
IR ( uA ) Typ |
||
|
BSD E10A065 |
650 |
10 |
90 |
1.45 |
1 |
TO-220 |
|
BSD E15A065 |
650 |
15 |
135 |
1.37 |
2 |
TO-220 |
|
BSD G20A065 |
650 |
20 |
172 |
1.32 |
2 |
TO-247 |
|
BSD G30A065 |
650 |
30 |
273 |
1.45 |
2 |
TO-247 |
Synchronous Rectification Section This is the secondary synchronous rectification circuit, recommended to use Born Semiconductor's low voltage SGT-MOS series products. It is designed with SGT process technology to achieve shielding of the gate and drift region, reducing Miller capacitance and gate charge, speeding up device switching, lowering switching losses, and improving system efficiency.
|
Part No. |
VDSS (V) |
ID (A) |
VGS(th) ( Typ V) |
RDS(ON) VGS=10V |
Type |
Package |
|
|
Typ (m Ω ) |
Max (m Ω ) |
||||||
|
BMO06N250 |
60 |
149 |
1.7 |
2.1 |
2.5 |
N |
PFDN5*6 |
|
BMK06N290 |
60 |
160 |
1.7 |
2.4 |
2.9 |
N |
TO-263 |
|
BMO10N380 |
100 |
113 |
3 |
3.5 |
4.3 |
N |
PFDN5*6 |
|
BMO10N350 |
100 |
138 |
3 |
2.9 |
3.5 |
N |
PFDN5*6 |
|
BME10N360 |
100 |
180 |
3 |
3.0 |
3.6 |
N |
TO-220 |
|
BMK10N390 |
100 |
150 |
3 |
3.4 |
3.9 |
N |
TO-263 |
|
BMTO10N180 |
100 |
320 |
3 |
1.6 |
1.8 |
N |
TOLL |
|
BMO12N660 |
120 |
100 |
1.7 |
5.4 |
6.6 |
N |
PFDN5*6 |
Born Semiconductor (Shenzhen) Co., Ltd., integrating R&D, production, and sales. Main products include protection devices, diodes and transistors, MOSFETs, motor driver ICs, interface chips, etc. Rich in MOSFET products with excellent performance and price advantages. The product series are widely applied, suitable for low to high power applications. For more model information, please contact online. Free samples, quotations, and technical support services are available upon request.
Popular Articles
BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD
7/F and 13/F, Senheinokochuang Building, Gaoke Industrial Zone, Dezheng Road, Shiyan Street, Bao 'an District, Shenzhen
Factory Address: Building 6, Intelligent Hardware Industry Port, Intersection of Zheng Bei Avenue and Tan Huai Avenue, Muluan Street, Wuzhi County, Jiaozuo City, Henan Province
