What are the development advantages of the domestic circuit protection component industry?
The development advantages of the domestic circuit protection component industry include: 1. The strong demand in downstream markets and the upgrading of electronic products have driven the growth of the circuit protection industry. 2. Industry manufacturers with high technological content and leading technology can achieve high profit margins and maintain continuous investment in research and development and equipment. 3. The production areas are concentrated in China, which has become the world's production base for electronic products and driven the rapid growth of the industry. 4. Supported by national industrial policies, circuit protection components are a new type of electronic component and an industry encouraged by the country for development.
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2024-06
Investing 5 billion euros, STMicroelectronics announces the construction of an 8-inch SiC wafer fab in Italy
STMicroelectronics announced that it will invest 5 billion euros to establish a 200mm (8-inch) silicon carbide (SiC) manufacturing plant in Catania, Italy, for the production of SiC power devices and modules. This SiC park will integrate all steps from substrate development to wafer manufacturing, module assembly, and packaging, with the aim of improving yield and performance. This project is the center of STMicroelectronics' global silicon carbide ecosystem and the first factory in Europe to achieve mass production of 200nm silicon carbide wafers. The Italian government will provide approximately 2 billion euros in support within the framework of the European Chip Act, and the factory is planned to start mass production in 2026 and is expected to reach full capacity by 2033.
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2024-06
ASML confirms delivery of high NA EUV lithography machines worth $380 million to TSMC this year
ASML has confirmed that it will deliver a high NA EUV lithography machine worth $380 million to TSMC, which had previously stated that it did not require this technology. TSMC has changed its mindset and plans to produce chips with higher precision. ASML's High NA lithography machine is expected to reduce the size by 66% and increase the upper limit of chip manufacturing. TSMC plans to use GAAFET transistors at the 2nm node.
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2024-06
Zero breakthrough in domestic equipment! Domestic pre coating and developing equipment will enter the OCF international supply chain for the first time!
Domestic pre coating and developing equipment will enter the OCF international supply chain for the first time, which is a major breakthrough for domestic equipment. Xinda Semiconductor Equipment (Suzhou) Co., Ltd. has cooperated with Jilin Qiushi Spectral Data Technology Co., Ltd. to achieve complete localization of coating and developing equipment, which can replace imported foreign products. Xinda Semiconductor plans to complete the research and development, production, testing, and sales of 14-28nm equipment within the next three years, with a total R&D investment expected to exceed 100 million yuan within five years. The research and production of this equipment have laid a solid foundation for breakthroughs in domestic photolithography processes, especially for further breakthroughs in photoresist.
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2024-06
Mitsubishi Electric Kumamoto SiC wafer fab to be put into operation 5 months ahead of schedule
Mitsubishi Electric will build a new 8-inch SiC wafer fab in Kumamoto, Japan to operate ahead of schedule in response to market demand growth. Applied in the automotive and industrial fields, it is expected to improve the driving range and overall energy-saving effect of electric vehicles. Mitsubishi Electric plans to expand the sales proportion of SiC and strengthen related production facilities.
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2024-06
Beijing Integrated Circuit Industry Education Integration Base will be put into operation in September next year
The Beijing Integrated Circuit Industry Education Integration Base project is currently under construction and is expected to be put into use in September 2025. This base is located in the core area of Beijing Economic Development Zone, with a total construction area of 105524 square meters. It will include four teaching and research buildings with 11 floors above ground and 3 floors underground. The project aims to provide a venue that integrates teaching, research, and living functions, with a maximum capacity of 2000 people for simultaneous on campus training. The building adopts a series of intelligent and green construction technologies, including BIM 3D intelligent steel structure modeling, intelligent building robots, digital twin visualization delivery and operation systems, etc., to improve construction level and safety production. The construction of this base is an important measure to deepen the integration of industry and education and cultivate integrated circuit talents. The construction unit will ensure the progress and quality of the project and turn it into a high-quality project.
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2024-06
BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD
7/F and 13/F, Senheinokochuang Building, Gaoke Industrial Zone, Dezheng Road, Shiyan Street, Bao 'an District, Shenzhen
Factory Address: Building 6, Intelligent Hardware Industry Port, Intersection of Zheng Bei Avenue and Tan Huai Avenue, Muluan Street, Wuzhi County, Jiaozuo City, Henan Province
